数据表 | 图片 | 型号 | 品牌 | 库存 | 价格/元 | 数量 | 描述 |
---|---|---|---|---|---|---|---|
FM93C46LMT8X | Rochester Electronics, LLC | 5000 | 3.264000 |
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EEPROM, 64X16, SERIAL, CMOS | ||
BR24G1MFJ-5AE2 | Rohm Semiconductor | 5000 | 11.832000 |
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1MBIT, IC BUS, HIGH SPEED WRITE | ||
S29GL512S10TFI020 | Cypress Semiconductor Corp | 5000 | 66.096000 |
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IC FLASH 512MBIT PARALLEL 56TSOP | ||
041841QLAD-5 | Rochester Electronics, LLC | 5000 | 308.244000 |
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256KX18 SRAM | ||
AS6C1008-55SIN | Alliance Memory, Inc. | 5000 | 21.828000 |
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IC SRAM 1MBIT PARALLEL 32SOP | ||
AS4C16M16SA-6TCN | Alliance Memory, Inc. | 5000 | 31.144000 |
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IC DRAM 256MBIT PAR 54TSOP II | ||
CAT93C46RVP2IGT3-CS | Rochester Electronics, LLC | 5000 | 1.564000 |
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IC EEPROM 1KBIT SPI 4MHZ 8TDFN | ||
TMS2114L-15NL | Rochester Electronics, LLC | 5000 | 3.264000 |
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STANDARD SRAM, 1KX4 | ||
AT25DF041B-MHNHR-T | Dialog Semiconductor GmbH | 5000 | 11.900000 |
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IC FLASH 4MBIT SPI 85MHZ 8UDFN | ||
S29GL512T10FHI020 | Cypress Semiconductor Corp | 5000 | 66.912000 |
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IC FLASH 512MBIT PARALLEL 64FBGA | ||
04184QLAD-5 | Rochester Electronics, LLC | 5000 | 308.244000 |
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4MBIT (256K X 18) SRAM | ||
IS61LV25616AL-10TL-TR | ISSI, Integrated Silicon Solution Inc | 5000 | 30.396000 |
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IC SRAM 4MBIT PARALLEL 44TSOP II | ||
AS4C16M16SA-7TCN | Alliance Memory, Inc. | 5000 | 31.144000 |
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IC DRAM 256MBIT PAR 54TSOP II | ||
CAT93C56VI-G-ON | Rochester Electronics, LLC | 5000 | 1.564000 |
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IC EEPROM 2KBIT SPI 2MHZ 8SOIC | ||
LE25FU406BMB-TLM-H | Rochester Electronics, LLC | 5000 | 3.264000 |
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4M BIT (512K X 8) SERIAL FLASH M | ||
AT25DF041B-XMHNHR-T | Dialog Semiconductor GmbH | 5000 | 12.104000 |
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IC FLASH 4MBIT SPI 85MHZ 8TSSOP | ||
S29GL512T10DHI020 | Cypress Semiconductor Corp | 5000 | 66.912000 |
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IC FLASH 512MBIT PARALLEL 64FBGA | ||
27C256-20B/XA | Rochester Electronics, LLC | 5000 | 308.244000 |
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256K (32K X 8) CMOS EPROM | ||
MX25L12835FZ2I-10G | Macronix | 5000 | 21.964000 |
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IC FLSH 128MBIT SPI 104MHZ 8WSON | ||
MX29F800CBTI-70G | Macronix | 5000 | 31.144000 |
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IC FLASH 8MBIT PARALLEL 48TSOP |