数据表 | 图片 | 型号 | 品牌 | 库存 | 价格/元 | 数量 | 描述 |
---|---|---|---|---|---|---|---|
93LC56BT-E/SN | Microchip Technology | 5000 | 2.516000 |
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IC EEPROM 2KBIT SPI 2MHZ 8SOIC | ||
24LC02BHT-E/OT | Microchip Technology | 5000 | 2.176000 |
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IC EEPROM 2KBIT I2C SOT23-5 | ||
S29GL01GP11FFIR20 | Flip Electronics | 5000 | 117.912000 |
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IC FLASH 1GBIT PARALLEL 64BGA | ||
MT46V16M8TG-6T L:D TR | Micron Technology Inc. | 5000 | 59.976000 |
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IC DRAM 128MBIT PARALLEL 66TSOP | ||
CAT25010YI-GT3 | onsemi | 5000 | 1.904000 |
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IC EEPROM 1KBIT SPI 20MHZ 8TSSOP | ||
M5M5W816WG-70HI#ST | Rochester Electronics, LLC | 5000 | 98.736000 |
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STANDARD SRAM, 512KX16, 55NS | ||
AT24C01C-SSHM-B | Microchip Technology | 5000 | 1.360000 |
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IC EEPROM 1KBIT I2C 1MHZ 8SOIC | ||
71V416L10BE | Rochester Electronics, LLC | 5000 | 30.328000 |
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IC SRAM 4MBIT PARALLEL 48CABGA | ||
M95040-DFMC6TG | STMicroelectronics | 5000 | 2.516000 |
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IC EEPROM 4KBIT SPI 8UFDFPN | ||
24LC08BT/SN | Microchip Technology | 5000 | 2.176000 |
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IC EEPROM 8KBIT I2C 400KHZ 8SOIC | ||
MT57V512H36EF-5 | Rochester Electronics, LLC | 5000 | 118.048000 |
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DDR SRAM, 512KX36, 2.4NS, CMOS, | ||
NXH5104UK/A1Z | NXP USA Inc. | 5000 | 62.764000 |
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IC EEPROM 4MBIT SPI 13WLCSP | ||
24AA01T-I/MNY | Microchip Technology | 5000 | 1.904000 |
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IC EEPROM 1KBIT I2C 400KHZ 8TDFN | ||
M5M5W817KT-70HI#BT | Rochester Electronics, LLC | 5000 | 98.736000 |
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512K X16, SRAM | ||
AT24C02D-SSHM-B | Microchip Technology | 5000 | 1.360000 |
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IC EEPROM 2KBIT I2C 1MHZ 8SOIC | ||
71V416S10BE | Rochester Electronics, LLC | 5000 | 30.328000 |
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IC SRAM 4MBIT PARALLEL 48CABGA | ||
FT24C64A-UNR-T | Fremont Micro Devices Ltd | 5000 | 2.584000 |
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IC EEPROM 64KBIT I2C 800KHZ 8DFN | ||
24FC16T-E/SN | Microchip Technology | 5000 | 2.176000 |
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IC EEPROM 16KBIT I2C 1MHZ 8SOIC | ||
RMLV0816BGBG-4S2#KC0 | Rochester Electronics, LLC | 5000 | 120.700000 |
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IC SRAM 8MBIT PARALLEL 48TFBGA | ||
CY7C1318KV18-250BZXI | Cypress Semiconductor Corp | 5000 | 62.968000 |
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NO WARRANTY |